By Igor A. Levitsky
Photophysics of Carbon Nanotubes Interfaced with natural and Inorganic fabrics describes actual, optical and spectroscopic homes of the rising category of nanocomposites shaped from carbon nanotubes (CNTs) interfacing with natural and inorganic fabrics.
The 3 major chapters element novel traits in photophysics relating to the interplay of sunshine with a variety of carbon nanotube composites from really uncomplicated CNT/small molecule assemblies to complicated hybrids comparable to CNT/Si and CNT/DNA nanostructures. the newest experimental effects are up with distinctive discussions and clinical and technological views to supply a via insurance of significant subject matters including:
-Light harvesting, strength conversion, photoinduced cost separation and delivery in CNT dependent nanohybrids
-CNT/polymer composites displaying photoactuation; and
-Optical spectroscopy and constitution of CNT/DNA complexes.
Including unique information and a quick overview of modern examine, Photophysics of Carbon Nanotubes Interfaced with natural and Inorganic Materials makes this rising box of photophysics and its functions on hand to teachers and execs operating with carbon nanotube composites in primary and utilized fields
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Extra resources for Photophysics of Carbon Nanotubes Interfaced with Organic and Inorganic Materials
Example text
These results indicate that MEG threshold can be close to 2Eg (Eg is the bandgap for semiconducting nanotube). An observation of MEG and faster Auger recombination [178] than for QD nanostructures is in agreement with the physical picture that electrons and holes in SWNTs exhibit stronger confinement when compared to QDs. So far, MC generation in SWNTs has been observed only for SWNT photodiode in split-gate geometry [166], resulting in formation of p–n junction, similar to Lee’s study [18]. The device demonstrated typical I–V diode characteristics in the dark and under the light for photon energies below 2Eg [166].
010 Voltage (V) Fig. 19 a Current–voltage (I–V) plot of MWNT/n-Si devices showing the photovoltaic response under low intensity IR light (15 mW/cm2). Inset dark I–V characteristics on a linear scale: x-axis is V and y-axis is mA/cm2; b energy band diagram of MWNT/n-Si heterojunction. Electron affinity, χ, and conduction band offset, ΔEc, for MWNT and n-Si are shown in the energy band diagram [246]. Reprinted with permission from Applied Physics Letters, 2010, 96 (3), 033106, Copyright © 2010 American Institute of Physics Tzolov et al.
Therefore, substantial efforts were undertaken to compensate QD low charge mobility by introducing carbon nanotubes in the QD/polymer blends, due to excellent carrier transport properties of CNTs and additional source of charge separation at CNT/QD interface [185–191, 194, 195]. Moreover, in some studies, the polymer component was completely excluded [191–193], as QD electron affinity suitable for CNT/QD charge transfer can be tailored by a selection of semiconducting material, and their band gap is controlled by the QD size.